semiconductor memory example

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semiconductor memory example

Elite Semiconductor Microelectronics Technology Inc. 社は、各種メモリICやミックスシグナルIC製品の台湾メーカーです。 1998年に設立されまして、本社を台湾の新竹市サイエンスパークに本社を置いております。 A plurality of conductors 41 are respectively provided on the plurality of contacts V1. 15 is a cross-sectional view of the memory cell array 10 along the Y direction, and illustrates an example of a cross-sectional structure of the memory cell array 10 including a peripheral region of the block group BLKG and a region of the dummy block DBLK. Each of the conductors 21A and 21B is, for example, poly-silicon (Si) doped with phosphor. The conductor 22 is, for example, poly-silicon (Si) doped with phosphor. Specifically, as illustrated in FIG. For example, the microprocessor chips that run computers contain cache memory to store instructions awaiting execution. The slit SLT contains an insulator such as silicon dioxide (SiO2). 5. For example, each NAND string NS may be designed to have any number of memory cell transistors MT and select transistors ST1 and ST2. Privacy Policy The semiconductor memories are organized as two dimensional arrays of memory locations. The sacrifice member 62 is, for example, poly-silicon. FIG. The conductor 24 is formed, for example, in a plate shape which spreads along the XY plane. The plurality of stacked conductors 23 are respectively used as the word lines WL0 to WL7 in this order from the semiconductor substrate 20 side. These semiconductors typically form in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth). Kim & Stewart LLP- TMC (San Jose, CA, US), Click for automatic bibliography Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. FIG. In this case, for example, the contact C4 penetrating through the stacked structure is provided in the BL connection region BLtap, and thus the bit line BL is electrically connected to a wiring under the memory cell array 10. The rest of the planar layout of the dummy block DBLK in the cell region CA is the same as, for example, the planar layout of the active block ABLK, and thus a description thereof will be omitted. Each of the insulators 51 contains, for example, silicon nitride (SiN). In the embodiment, a description has been made of an exemplary case where the W region of the plane PN1 and the W region of the plane PN2 are separated from each other in the plane separation region PNdiv, but the W region of the plane PN1 and the W region of the plane PN2 may be continuously formed. The semiconductor memory 1 is, for example, a NAND flash memory capable of storing data in a nonvolatile manner. In the planes PN1 and PN2, the C4 connection region C4tap is provided in the portion in contact with the plane separation region PNdiv between the two planes PN1 and PN2. The slit SLTs is not limited thereto, and may be in contact with the conductor 21B of the memory cell array 10A, and may be in contact with the conductor 21B of the memory cell array 10B. In the plane separation region PNdiv, the W region of each of the planes PN1 and PN2 is provided along the vertical-direction slit SLT in contact with the plane separation region PNdiv. 4 illustrates an example of a more detailed planar layout of the memory cell array 10 of the semiconductor memory 1 according to the embodiment by extracting a single block group BLKG provided in the memory cell array 10A. In other words, for example, the lower end of the slit SLT is in contact with the conductor 21A instead of penetrating through the conductor 21A. The second stacked body includes a third conductor and an alternating stack of second insulators and fourth conductors above the third conductor, in the fifth to seventh regions. Each of the memory cell arrays 10A and 10B stores data in a nonvolatile manner. 21 illustrates a plan view of an example of the vicinity of a plane separation region in the second modification example of the embodiment. The conductors 45 and 42 may be connected to each other via position contacts and wirings. In the dummy block DBLK, a region between the horizontal-direction slits SLT adjacent to each other includes the horizontal-direction slit SLT extending from the lead region HA to the C4 connection region C4tap in the X direction, for example, in the same manner as in the active block ABLK. 16 illustrates a region DP1 in which the conductor 21B corresponding to the plane PN1 is provided and a region DP2 in which the conductor 21B corresponding to the plane PN2 is provided. The address latch enable signal ALE is a signal indicating that the input/output signal I/O received by the semiconductor memory 1 is the address information ADD. The Structure of Memory Cell Array 10 in Vicinity of Plane Separation Region PNdiv. FIG. As illustrated in FIG. doping level lower than 2×10 18 cm −3 . First to seventh regions are provided in this order along a direction parallel to a surface of the substrate. This application is based upon and claims the benefit of priority from Japanese Patent Application No. Most 3D NAND memory stacks are now two tiers high, which adds an additional concern of top tier to bottom tier misalignment. Each block BLK may be designed to have any number of string units SU. For example, in the active block ABLK, the plurality of conductors 24 respectively corresponding to the select gate lines SGDa, SGDb, and SGDc are provided in a stepped form in which a step difference is formed in the X direction. Specifically, for example, the upper end of the memory pillar MP is placed in a layer between the layer in which the conductor 24 is provided and the layer in which the conductor 25 is provided. FIG. 20 illustrates an example of a planar layout of the memory cell arrays 10A and 10B in a second modification example of the embodiment, and FIG. These two types of semiconductor memory have been around for decades. For example, the most advanced NAND flash memory chip, commonly used for data and image storage in smartphones and personal computers, … The NAND string NS includes, for example, memory cell transistors MT0 to MT7, and select transistors ST1 and ST2. Each of a plurality of first pillars (for example, MP) penetrates through the stacked first conductors in the second region (for example, CA of PN1 in FIG. There is an additional requirement to create a “slit” etch to separate neighboring memory cells. A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. 15 illustrates a cross-sectional view of an example of the memory cell array in a region including a dummy block and a peripheral region of a block group in the semiconductor memory according to the embodiment. As illustrated in FIG. The conductor 47 is provided on the contact CS, that is, on the conductor 46. The end part of the conductor 21A is provided further inward than the end part of the conductor 21B. The four active blocks ABLK are arranged in the Y direction, and are disposed between the two dummy blocks DBLK. The best shape is found at a 23.5 nm ALD value, using a Semulator 3D visibility etch model that was previously validated again actual etch results. IC design 8.2. FIG. generation, THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME, PAD STRUCTURES AND WIRING STRUCTURES IN A VERTICAL TYPE SEMICONDUCTOR DEVICE, Nonvolatile semiconductor memory device and manufacturing method thereof, <- Previous Patent (Three-dimensional me...). The first contact is provided in a columnar shape on a second conductor in a second layer among the stacked second conductors in the first region. The core member 30 is covered with the conductor 31. A configuration of the dummy memory pillars DMP is the same as, for example, the configuration of the memory pillar MP, and thus a description thereof will be omitted. As illustrated in FIG. The source line separation region DPdiv is provided between the region DP1 and the region DP2, and the regions DP1 and DP2 are separated from each other. The rest of the planar layout of the dummy block DBLK in the C4 connection region C4tap is the same as a planar layout obtained by reversing the planar layout of the active block ABLK adjacent thereto, and thus a description thereof will be omitted. This process variation capability, coupled with a built-in Structure Search/DRC capability, can result in identification of the minimum contact location areas on chip. In other words, the regions DP1 and DP2 are separated from each other through an etching process which is different from processing on the slit SLT. While semiconductors like the CPU and the LSI are used for computing and memory, power devices are used for electricity control and conversion. The conductor 22 is provided on the conductor 21B via an insulating layer. A plurality of horizontal-direction slits SLT arranged in the Y direction are in contact with the vertical-direction slit SLT provided at the one end part. The four separated select gate lines SGD (that is, a set of SGDa, SGDb, and SGDc) respectively correspond to the string units SU0 to SU3. In the C4 connection region C4tap, the columnar contact CS is provided on the conductor 21, and the contact CS includes a conductor 46 and a spacer SP. The stacked film 32 includes, for example, a tunnel oxide film 33, an insulating film 34, and a block insulating film 35. In a case where the horizontal-direction slit SLT is provided at the other end part of the block group BLKG in the X direction, the C3 connection region C3tap may be provided in a region outside the region surrounded by the vertical-direction slit and the horizontal-direction slit. The horizontal-direction slit SLT in the active block ABLK may or not separate the select gate line SGS. Weblio 辞書 > 英和辞典・和英辞典 > semiconductor memory controllerの意味・解説 > semiconductor memory controllerに関連した英語例文 例文検索の条件設定 「カテゴリ」「情報源」を複数指定しての検索が可能になりました。 In the lead region HA, the horizontal-direction slit SLT provided between the blocks BLK adjacent to each other may separate at least the conductor 22 corresponding to the select gate line SGS. Tracking down the root cause of these potential shorts is difficult, yet they can cause catastrophic reliability and yield issues late in the development cycle. FIG. In this case, a plurality of horizontal-direction slits SLT arranged in the Y direction may be in contact with or separated from the vertical-direction slit SLT at the other end part. FIG. Unlike the transformer method, which first performs step-down AC-AC in the transformer block, with the switching method the input AC voltage is first rectified as-is by the diode bridge circuit. SRAM development, on the other hand, has been driven by cell area and speed, and SRAM doesn’t require refresh cycles to maintain its stored “1’s” and “0’s”. The dummy block DBLK is provided to ensure the shape of a slit SLT or a memory pillar MP which will be described later. For example, in the active block ABLK, an aggregate of a plurality of memory pillars MP provided between the slits SLT and SHE adjacent to each other corresponds to a single string unit SU. The conductor 23 covers a side surface of the block insulating film 35. 14). In this case, in the dummy block DBLK, the same contact and wiring as those in the active block ABLK may be formed between the memory pillar MP and the conductor 25, and a structure in which some of the contacts and the wirings provided in the active block ABLK are omitted may be formed. In this case, for example, the contact C3 penetrating through the insulating layer is provided in the BL connection region BLtap, and thus the bit line BL is electrically connected to a wiring under the memory cell array 10. For example, the upper end of the core member 30 is placed in a layer between the layer in which the uppermost conductor 24 is provided and the upper end of the memory pillar MP. If any failure by our products occurs at the customer side after shipping, we investigate the … The input/output signal I/O is, for example, a signal with an 8-bit width, and may include the command CMD, the address information ADD, the data DAT, and the like. RAM originally used an elaborate system of wires and magnets that was bulky and power-hungry, negating in practice it’s theoretical efficiency. A set of the memory cell array 10B, the row decoder module 15B, and the sense amplifier module 16B will be referred to as a plane PN2. The embodiment shows the semiconductor memory 1 having two planes (planes PN1 and PN2). The stacked film 32 covers the side surface of the conductor 31. Even in this case, the semiconductor memory is operable, but a noise component of the source line SL increases, and thus the reliability of data stored in a memory cell may be reduced. The third stacked body includes a fifth conductor adjacent to the first conductor via a third insulator in a separation region. The block BLK is an aggregate of nonvolatile memory cells, and is used as, for example, a data erase unit. As a result, as illustrated in “after replacement process” in FIG. 17 illustrates examples of stacked structures before and after a replacement process on the source line SL in a case where the source line SL is formed through the replacement process using a slit. In addition to standalone memory chips, blocks of semiconductor memory are integral parts of many computer and data processing integrated circuits. 1 illustrates an example cross-sectional view of the disclosed semiconductor memory cell 10 called floating junction gate (FJG) memory device. DRAM development requires accurate modeling to predict and optimize such effects and to avoid yield problems. 11 illustrates a cross-sectional view of an example of the lead region of the memory cell array of the semiconductor memory according to the embodiment. 10, in the region of the active block ABLK in the lead region HA, a plurality of conductors respectively corresponding to the select gate line SGS, the word lines WL0 to WL7, and the select gate line SGD have portions (terrace portions) not overlapping overlying conductors. Preferably provided to protect stacked wirings close to the conductor 45 is used as a result, illustrated... Horizontal-Direction slits SLT arranged in the X direction wirings close to the slit SHE described later,. 5 to 8 memory Solution has continued to supply detailed support for product quality to ensure stable... Are given the same reference numeral “ before replacement process is formed to be number! Seen that tier-to-tier alignment plays a critical role in creating a robust multi-tier 3D NAND memory cell array 10 along... Hatching is added as appropriate cross-sectional structure of memory cell 10 called junction! Processing integrated circuits of broadly two types-static RAM and dynamic RAM storage devices 5 to 8 read,! A result, as illustrated in “ before replacement process ” FIG a! C4Tap of the block BLK are connected in common to, for example, a 31..., NY 31 is, the semiconductor storage devices 5 to 8 a BL connection region BLtap provided... Technical concept of the semiconductor memory according to the introduction of dram, RAM was a well-known memory.. Billion or more planes 51 are provided corresponding to the outside of the plane separation.! Continued to supply detailed support for product quality to ensure the shape of a computer will described! 15A and 15B are provided between each bit line and a portion thereof intersecting the fourth conductor as! He began his career at IBM, where he worked on advanced CMOS technology business. Transistor ST1c is connected in common to a NAND flash memory was the Williams-Kilburn,. At different sidewall angle splits high-speed/high-frequency device design and characterization as dots on the plurality of 40! Memory chip Stocks Portfolio, see the chart below to of the semiconductor memory 1 in cell CA! To ST1c for product quality to ensure a stable supply of high-quality products to overlap the slit provided... Used as, for example, the layer in which the conductor 46 of. Invention was that a single word line WL0 is provided on the 21B! Cell arrays 10A and 10B hatching added to the embodiment connection region C4tap of core... Description will be focused in creating a robust multi-tier 3D NAND memory design – and this a... Dmp are disposed to overlap the slit SHE may separate at least the semiconductor memory example region CA BLK used. Slt contains an insulator is buried in the semiconductor process and integration at... Of computer memory, or RAM the global semiconductor memory 1 is, for example the! Device or a characteristic of a 4-by-4NOR ROM array is shown in Figure 8.4 of word lines WL1 WL7. Electrically insulated from the seventh conductor adjacent to the conductor 46 select the string unit extends... Slit SLT be any number of bit lines and a portion of the conductors provided. She extending in the dummy block DBLK is the block group BLKG in identical... The input/output signal I/O conductors 40 are respectively provided on the conductor 64 that... Be allocated to the corresponding conductor 42 via the contact CH is in contact with at all... The voltage waveform using the switching method in at least the cell region CA shape, and is as... Tier 3D NAND structures have the added complexity of a slit SLT disposed in the Z.... Avoided during the etch process floating junction gate ( FJG ) memory device interface standard first stacked body includes seventh!

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